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| SMD Type Transistors IC Complementary MOSFET Half-Bridge (N- and P-Channel) KI4500BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25 (TJ = 150 )* Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec TJ, Tstg TA = 70 IDM IS PD 2.1 2.5 1.6 Symbol VDS VGS ID 9.1 7.3 30 1.1 1.3 0.8 -2.1 2.5 1.6 -55 to 150 N-Channel 10 sec Steady State 20 12 6.6 5.3 ?5.3 -4.9 -20 -1.1 1.3 0.8 P-Channel 10 sec Steady State -20 12 -3.8 -3.1 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot *Surface Mounted on FR4 Board. RthJA RthJc 40 75 20 Max 50 95 22 P-Channel Typ 41 75 23 Max 50 95 26 /W Unit Steady State Steady State www.kexin.com.cn 1 SMD Type KI4500BDY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 12 V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 VDS = -16V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS =5 V, VGS = 4.5 V VDS =-5 V, VGS = -4.5 V VGS = 4.5 V, ID = 9.1A Drain Source On State Resistance* rDS(on) VGS = -4.5 V, ID = -5.3A VGS = 2.5 V, ID = 3.3A VGS = -2.5 V, ID = -1A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width gfs VSD Qg Qgs Qgd td(on) tr td( off) tf trr VDS = 15 V, ID = 9.1A VDS = -15 V, ID = -5.3A IS = 2.1A, VGS = 0 V IS = -2.1A, VGS = 0 V N-Channel VDS = 10 V, VGS = 4.5V, ID = 9.1A P-Channel VDS = -10 V, VGS = -4.5 V, ID = -5.3A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 10V, Rg = 6 P-Channel VDD = -10 V, RL = 10 ID= -1 A, VGEN = -4.5 V, Rg = 6 IF = 2.1A, di/dt = 100 A/ IF =- 2.1 A, di/dt = 100 A/ s s A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -20 Min 0.6 -0.6 Transistors IC Typ Max 1.5 -1.5 100 100 1 -1 5 -5 Unit V nA A A 0.016 0.020 0.048 0.060 0.024 0.030 0.082 0.100 29 11 0.8 ?0.8 11 6.0 2.5 1.3 3.2 1.6 35 20 50 35 31 55 15 35 30 25 50 30 80 60 50 85 30 60 60 50 ns 1.2 -1.2 17 9 nC mS V 300 s, duty cycle 2%. 2 www.kexin.com.cn |
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